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| Ordering number : ENN8181 CPH5839 CPH5839 Features * * MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications DC / DC converter applications. Composite type with a N-Channel Sillicon MOSFET (MCH3409) and a schottky barrier diode (SBS005) contained in one package facilitating high-density mounting. [MOSFET] * Low ON-resistance. * Ultrahigh-speed switching. * Low voltage drive. [SBD] * Short reverse recovery time. * Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 30 30 1 10 --55 to +125 --55 to +125 V V A A C C VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (600mm2!0.8mm) 1unit 20 10 2.0 8.0 0.9 150 --55 to +125 V V A A W C C Symbol Conditions Ratings Unit Marking : XR Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11205PE TS IM TB-00001085 No.8181-1/6 CPH5839 Electrical Characteristics at Ta=25C Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance VR VF 1 VF 2 IR C trr Rth(j-a) IR=1mA IF=0.5A IF=1A VR=15V VR=10V, f=1MHz, 1 cycle IF=IR=100mA, See specified Test Circuit. Mounted on a ceramic board (900mm2x0.8mm) 30 0.35 0.42 35 15 110 0.4 0.47 500 V V V A pF ns C / W V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=4V ID=0.5A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=4V, ID=2A VDS=10V, VGS=4V, ID=2A VDS=10V, VGS=4V, ID=2A IS=2A, VGS=0 0.4 2.1 3.5 100 130 190 40 25 9 25 25 18 2.7 0.6 0.6 0.87 1.2 130 180 20 1 10 1.3 V A A V S m m pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit Package Dimensions unit : mm 2171 2.9 5 4 3 0.15 Electrical Connection 5 4 3 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 1 2 0.6 1.6 2.8 0.05 0.2 Top view 1 0.95 2 0.4 0.6 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5 0.2 0.4 0.7 0.9 No.8181-2/6 CPH5839 Switching Time Test Circuit [MOSFET] VIN 4V 0V VIN ID=1A RL=10 VOUT 10s 50 100 10 trr Test Circuit [SBD] VDD=10V Duty10% 100mA D PW=10s D.C.1% G --5V trr CPH5839 P.G 50 S 1.6 2.5 3.0V Drain Current, ID -- A 1.4 1.2 Drain Current, ID -- A 2.5V 2.0 6.0V 1.0 0.8 0.6 0.4 0.2 0 0 1.5 1.0 0.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.4 0.8 1.2 1.6 2.0 300 Drain-to-Source Voltage, VDS -- V IT02687 RDS(on) -- VGS [MOSFET] Ta=25C 250 IT02688 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta [MOSFET] Static Drain-to-Source On-State Resistance, RDS(on) -- m 250 Static Drain-to-Source On-State Resistance, RDS(on) -- m 200 200 1.0A 150 150 ID=0.5A I D= 100 , VG 0.5A 100 .0A I D=1 =4.0V , VGS 50 50 0 0 1 2 3 4 5 6 7 8 9 10 0 --60 --40 --20 0 20 40 60 C --2 5 C 25 C Ta= 75 2.5 S= V 80 100 Ta= 2 120 4.0V 2.0 1.8 VGS=1.5V 5 C V VDS=10V --2 5 75C C 140 160 IT02690 2.0 ID -- VDS [MOSFET] 3.0 ID -- VGS 100mA [MOSFET] Gate-to-Source Voltage, VGS -- V IT02689 Ambient Temperature, Ta -- C No.8181-3/6 10mA CPH5839 10 yfs -- ID VDS=10V [MOSFET] Forward Transfer Admittance, yfs -- S 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 IF -- VSD [MOSFET] VGS=0 Ta C -25 =- 1.0 7 5 3 2 0.01 2 3 5 7 0.1 75 C 25 C Forward Current, IF -- A 2 3 5 7 1.0 2 3 5 0 0.2 0.4 Ta=7 5C 25C --25C 0.6 0.8 1.0 1.2 1.4 Drain Current, ID -- A 100 7 IT02691 SW Time -- ID VDD=10V VGS=4V [MOSFET] 1000 7 5 Diode Forward Voltage, VSD -- V IT02692 Ciss, Coss, Crss -- VDS [MOSFET] f=1MHz Switching Time, SW Time -- ns 5 Ciss, Coss, Crss -- pF 3 2 td(off) 3 2 Ciss tf 10 7 5 3 2 td(on) tr 100 7 5 3 2 Coss Crss 1.0 0.1 10 2 3 5 7 1.0 2 3 5 IT02693 0 5 10 15 20 Drain Current, ID -- A 4 VGS -- Qg [MOSFET] 2 10 7 5 Drain-to-Source Voltage, VDS -- V IT02694 ASO [MOSFET] IDP=8A <10s 10 0 s 1m s ms Gate-to-Source Voltage, VGS -- V VDS=10V ID=2A Drain Current, ID -- A 3 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ID=2A 10 2 DC Operation in this area is limited by RDS(on). 10 0m op s er ati on 1 0 0 1 2 3 IT07115 0.01 0.01 Ta=25C Single pulse Mounted on a ceramic board (600mm2!0.8mm) 1unit 2 3 5 7 0.1 23 5 7 1.0 23 5 7 10 23 IT08174 Total Gate Charge, Qg -- nC 1.0 PD -- Ta M ou Drain-to-Source Voltage, VDS -- V [MOSFET] Allowable Power Dissipation, PD -- W 0.9 0.8 nt ed on ac 0.6 er am ic bo ar d 0.4 (6 00 m m ! 0. 2 0.2 8m m )1 un it 160 0 0 20 40 60 80 100 120 140 Amibient Temperature, Ta -- C IT08175 No.8181-4/6 CPH5839 1.0 7 5 IF -- VF [SBD] 100 7 5 3 2 IR -- VR 5C Ta=12 [SBD] Reverse Current, IR -- mA Forward Current, IF -- A 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 5 10 100C 75C 0.1 7 5 3 2 50C Ta= 125 100 C C 75 C 50 C 25C 25C 0.01 0 0.1 0.2 0.3 0.4 0.5 IT00627 15 20 25 30 IT00628 Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W 1.0 0.9 0.8 0.7 0.6 0.5 PF(AV) -- IO Reverse Voltage, VR -- V 1000 7 5 [SBD] C -- VR [SBD] f=1MHz Interterminal Capacitance, C -- pF (1) Rectangular wave =60 (2) Rectangular wave =120 (3) Rectangular wave =180 (4) Sine wave =180 (2) (1) (4) (3) 3 2 100 7 5 3 2 10 7 5 3 2 1.0 1.0 2 3 5 7 2 3 5 IT00630 Rectangular wave 0.4 0.3 0.2 0.1 0 0 0.2 0.4 0.6 0.8 360 Sine wave 180 360 1.0 1.2 1.4 IT00629 10 Average Forward Current, IO -- A 12 IFSM -- t Is Reverse Voltage, VR -- V [SBD] Surge Forward Current, IFSM(Peak) -- A Current waveform 50Hz sine wave 10 8 20ms t 6 4 2 0 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Time, t -- s IT00631 No.8181-5/6 CPH5839 Note on usage : Since the CPH5839 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2005. Specifications and information herein are subject to change without notice. PS No.8181-6/6 |
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